The High-Mobility Bended n-Channel Silicon Nanowire Transistor
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2010
ISSN: 0018-9383,1557-9646
DOI: 10.1109/ted.2010.2040939